ne685m33 nec's npn silicon transistor california eastern laboratories ? low noise: nf = 1.5 db typ. @ v ce = 3 v, i c = 3 ma, f = 2 ghz ? insertion power gain: | s 21e | 2 = 11 db typ. @ v ce = 3 v, i c = 10 ma, f = 2 ghz ? 3-pin super lead-less minimold (m33) package features data sheet ordering information remark to order evaluation samples, contact your nearby sales of?ce. the unit sample quantity is 50 pcs. absolute maximum ratings (t a =+25oc) parameter symbol ratings unit collector to base voltage v cbo 9.0 v collector to emitter voltage v ceo 6.0 v emitter to base voltage v ebo 2.0 v collector current i c 30 ma total power dissipation p tot note 130 mw junction temperature t j 150 c storage temperature t stg ? 65 to +150 c note mounted on 1.08 cm 2 1.0 mm (t) glass epoxy pcb caut ion observe precautions when handling because these devices are sensitive to electrostatic discharge. part number quantity supplying form ne685m33-a 50 pcs (non reel) ? 8 mm wide embossed taping ? pin 2 (base) face the perforation side of the tape NE685M33-T3-A 10 kpcs/reel
ne685m33 electrical characteristics (t a =+25oc) notes 1. pulse measurement: pw 350 s, duty cycle 2% 2. collector to base capacitance when the emitter grounded h fe classification rank fb marking y2 h fe value 75 to 150 parameter symbol test conditions min. typ. max. unit dc characteristics collector cut-off current i cbo v cb = 5 v, i e = 0 ma C C 100 na emitter cut-off current i ebo v eb = 1 v, i c = 0 ma C C 100 na dc current gain h fe note 1 v ce = 3 v, i c = 10 ma 75 110 150 C rf characteristics gain bandwidth product f t v ce = 3 v, i c = 10 ma, f = 2 ghz 10 12 C ghz insertion power gain |s 21e | 2 v ce = 3 v, i c = 10 ma, f = 2 ghz 7 11 C db noise figure nf v ce = 3 v, i c = 3 ma, f = 2 ghz, z s = z opt C 1.5 2.5 db reverse transfer capacitance c re note 2 v cb = 3 v, i c = 0 ma, f = 1 mhz C 0.4 0.7 pf
ne685m33 typical characteristics (t a =+25oc, unless otherwise speci?ed) remark the graphs indicate nominal characteristics. v ce = 1 v 100 10 1 0.01 0.001 0.1 0.0001 0.7 0.5 0.6 0.4 0.8 0.9 1.0 v ce = 3v 100 10 1 0.01 0.001 0.1 0.0001 0.7 0.5 0.6 0.4 0.8 0.9 1.0 v ce = 2 v 100 10 1 0.01 0.001 0.1 0.0001 0.7 0.5 0.6 0.4 0.8 0.9 1.0 f = 1 mhz 0.5 0.2 0.1 0 2 4 6 8 10 250 200 150 100 50 0 25 50 75 100 125 150 130 0.4 0.3 40 10 20 30 0 2 4 6 8 i b = 50 a 200 a 300 a 350 a 400 a 150 a 100 a 35 25 15 5 250 a total power dissipat io n vs. ambient tempera ture total power dissipation p to t (mw) ambient t emperature t a (oc) mounted on glass epoxy pcb (1.08 cm 2 1.0 mm (t) ) reverse t ransfer capacitance c re (p f) collector to base v oltage v cb (v) reverse transfer cap acit ance vs. collect or to base volta ge collector current i c (ma) base to emitter v oltage v be (v) collect or current vs. base to emitter vo lt age collector current i c (ma) collector to emitter v oltage v ce (v) collect or current vs. collect or to emitter vo lt age collector current i c (ma) base to emitter v oltage v be (v) collect or current vs. base to emitter vo lt age collector current i c (ma) base to emitter v oltage v be (v) collect or current vs. base to emitter vo lt age
ne685m33 typical characteristics (t a =+25oc, unless otherwise speci?ed) remark the graphs indicate nominal characteristics. 1000 100 10 1 0.1 10 100 v ce = 1 v 1000 100 10 1 0.1 10 100 1000 100 10 1 0.1 10 100 v ce = 2 v v ce = 3 v dc current gain h fe collector current i c (ma) dc current gain vs. collect or current dc current gain h fe collector current i c (ma) dc current gain vs. collect or current dc current gain h fe collector current i c (ma) dc current gain vs. collect or current
ne685m33 package dimensions 3-pin super lead-less minimold (m33) (unit: mm) life support applications these nec products are not intended for use in life support devices, appliances, or systems where the malfunction of these prod ucts can reasonably be expected to result in personal injury . the customers of cel using or selling these products for use in such applications do so at their own risk and agree to fully indemnify cel for all damages resulting from such improper use or sale. a business partner of nec compound semiconductor devices, ltd. 06/22/2004 0.15 0.57 0.285 0.125 0.440.05 1 2 3 (bottom v iew) 0.15 0.840.05 0.125 0.15 0.640.05 0.1 1 0.4 1. emitter 2. base 3. collector pin connections y 2 ne package code: m33 sot number: -
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